20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 darlington coplementary silicon power transistors ...designed for general-purpose amplifier and low speed switching applications features: * collector-emitter sustaining vottage- *& v <**") - bdx53,bdxs4 60 v (min) - bdx53abdxs4a = 80 v (win) - bdx53b.bdx54b = 100 v(mln) - BDX53C.bdx54c * monolithic construction with built-in base-emitter shunt resistor maximum ratings characteristic collector-emitter voltage collector-base voltage emitter-base voltage collector current - continuous peak base current total power dissipation etc=25c derate above 25c operating and storage junction temperature range symbol vceo vcao vebo tsto bdx63 bdx83a bdxm bdxma 45 60 45 60 bdx53b bdx64b 80 80 bdx43c bdxc4c 100 100 5.0 8.0 12 0.2 60 0.48 -65 to +150 unit v v v a a w w/c c thermal characteristics characteristic thermal resistance junction to case symbol rejc max 2.08 unit c/w figure-1 power derating *. 1o 25 50 75 100 tc . temperature(?c) 125 150 npn pnp bdx53 bdx54 bdx53a bdx54a bdx53b bdx54b BDX53C bdx54c 8 ampere darlington complementary silicon power transistors 45-100 volts 60 watts to-220 1 2 3 pin1.ba8e z collector 4.couectom(case) dim a b c d e f g h 1 j k l m 0 millimeters min 14,68 9.78 5.01 13.06 357 2,43. 1.12 0.72 4.22 1.14 2.20 0.33 2,43 3.70 max 15.31 10.42 6.52 14.82 4.07 3.66 1.38 0.96 4.96 1.38 297 0.55 296 3.90 nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders.. quality semi-conductors
bdx53ab.c npn / bdx54,a,b,c pnp electrical characteristics ( tc = 25c unless otherwise noted ) characteristic symbol min max unit off characteristics collector-emitter sustaining vohage(1) bdx53, bdx54 ( l" 100 ma, l_? 0 ) bdx53a, bdx54a bdx53b, bdx54b BDX53C, bdx54c collector cutoff current ( vc1? 22 v, i.- 0 ) bdx53, bdxs4 ( vc1? 30 v, l.= 0 ) bdxs3a, bdx54a ( vci= 40 v, l,= 0 ) bdx53b, bdx54b ( vci= 50 v, l,= 0 ) BDX53C, bdx54c collector-base cutoff current ( vcb- rated vc.. ib- 0) emitter-base cutoff current (v^s.ov.1^0) vc?h^ ?ceo 'ceo iebo 46 60 80 100 0.5 0.5 0.5 0.5 200 2.0 v ma ua ma on characteristics (1) dc current gain (i^s.oavoe-s.ov) collector-emitter saturation voltag (ic?3.0a, i,- 12ma) base-emitter saturation voltage (ic*3.0a, ib? 12ma) diode forward-voltage (if=3.0a) hfe vce,-q v*w w 750 2.0 2.5 2.5 v v v (1) pulse test pulse width =300 us, duty cycle 2.0% bdx53 series npn internal schematic diagram bdx54 series pnp l_
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